SI2302 N

MOSFET stands for Metal Oxide Silicon Field Effect Transistor or Metal Oxide Semiconductor Field Effect Transistor. This is also called IGFET meaning Insulated Gate Field Effect Transistor. The FET is operated in both depletion and enhancement modes of operation. A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. When the MOSFET is activated and is on, the majority of the current flowing are electrons moving through the channel. This is in contrast to the other type of MOSFET, which are P-Channel MOSFETs, in which the majority of current carriers are holes. Logic Level Drive MOSFET means the MOSFET can be driven by the output voltage (4 to 5 V) of general-purpose logic IC. When the general-purpose logic IC does not have enough output current capability, the MOSFET cannot be driven.

Features:

• Rugged and Reliable
• Lead Free Product is Acquired
• High Dense Cell Design for Extremely Low RDS(ON)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free. “Green” Device (Note 1)

Features/Specs:

• Series: SI2
• Product Type: MOSFET
• Transistor Type: 1 N-Channel
• Transistor Polarity: N-Channel
• Number of Channels: 1 Channel
• Vds – Drain-Source Breakdown Voltage: 20 V
• Id – Continuous Drain Current: 2.6 A
• Rds On – Drain-Source Resistance: 57 mOhms
• Vgs – Gate-Source Voltage: – 8 V, + 8 V
• Vgs th – Gate-Source Threshold Voltage: 850 mV
• Qg – Gate Charge: 3.5 nC
• Pd – Power Dissipation: 710 mW
• Channel Mode: Enhancement
• Configuration: Single
• Fall Time: 7 ns
• Rise Time: 7 ns
• Forward Transconductance – Min: 13 S
• Typical Turn-Off Delay Time: 30 ns
• Typical Turn-On Delay Time: 8 ns
• Minimum Operating Temperature: – 55°C
• Maximum Operating Temperature: + 150°C
• Mounting Style: SMD/SMT
• Package/Case: SOT-23-3

Application:

• Battery management
• High speed switch
• Low power DC to DC converter