SI2301 A1SHB P

Si2301CDSVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.112 at VGS = – 4.5 V – 3.1 TrenchFET Power MOSFET- 20 3.3 nC Compliant to RoHS Directive 2002/95/EC0.142 at VGS = – 2.5 V – 2.7APPLICATIONS Load SwitchTO-236 (SOT-23) 

Features/Specs:

• Part NO: SI2301
• Marking Code: A1sHB
• Type of Transistor: MOSFET
• Type of Control Channel: P -Channel
• Maximum Power Dissipation (Pd): 1.25W
• Maximum Drain-Source Voltage: 20V
• Maximum Gate-Source Voltage: 8V
• Maximum Gate-Threshold Voltage: 0.45V
• Maximum Drain Current: 2.2A
• Maximum Junction Temperature: 150°C
• Rise Time: 36nS
• Drain-Source Capacitance: 223pF
• Maximum Drain-Source On-State Resistance: 0.13 Ohm
• Package: SOT23