IRF5305S N
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Features/Specs:
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-source voltage: 100V
- Gate-source voltage: ±20
- Continuous drain current: 10~14V
- Pulsed drain current: 56A
- Linear derating factor:0.59W/°C
- Single pulse avalanche energy: 69mJ
- Avalanche current: 14A
- Repetitive avalanche energy: 8.8mJ
- Maximum power dissipation: 88Watt
- Maximum power dissipation: 3.7 Watt
- Peak diode recovery dv/dt: 5.5 V/ns
- Operating junction and storage temperature range:-55 to +175°C
- Package: D2PAK
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